View APT1101RSFLL_644205.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT1101RBFLL APT1101RSFLL
1100V 13A 1.000
D3PAK
TO-247
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT1101RBFLL_SFLL UNIT Volts Amps
1100 13 52 30 40 403 3.23 -55 to 150 300 13 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1100 1.00 100 500 100 3 5
(VGS = 10V, 6.5A)
Ohms A nA Volts
11-2003 050-7187 Rev A
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT1101RBFLL_SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 550V ID = 13A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 550V ID = 13A @ 25C 6 RG = 1.6 INDUCTIVE SWITCHING @ 25C VDD = 733V, VGS = 15V ID = 13A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 733V, VGS = 15V ID = 13A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
2345 388 65 90 12 61 12 7 32 14 364 105 748 139
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
13 52 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -13A)
5
dv/
t rr
Reverse Recovery Time (IS = -13A, di/dt = 100A/s) Reverse Recovery Charge (IS = -13A, di/dt = 100A/s) Peak Recovery Current (IS = -13A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
210 710 1.0 3.6 10 14
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.31 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.35
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 15.38mH, RG = 25, Peak IL = 13A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -13A di/dt 700A/s VR 1100 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30 0.25
0.9
0.7 0.20 0.5 0.15 0.10 0.05 0 0.3 Note:
PDM t1 t2
11-2003
050-7187 Rev A
JC
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
25
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
APT1101RBFLL_SFLL
VGS =15 & 10V 20 7V 6.5V
0.0258
0.00295F
15
6V
Power (watts)
0.107
0.0114F
10 5.5V 5 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 0
0.177 Case temperature. (C)
0.174F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 30
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.40
NORMALIZED TO V = 10V @ 6.5A
GS
25 20 15
1.30 1.20 VGS=10V 1.10
10 5
TJ = -55C TJ = +25C TJ = +125C
1.00 VGS=20V 0.90 0.80
0
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
46 8 10 12 14 16 18 20 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
2
14 12 10 8 6 4 2 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0.90
3 2.5 2.0 1.5 1.0 0.5
= 6.5A = 10V
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50
11-2003 050-7187 Rev A
GS
0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
52
OPERATION HERE LIMITED BY RDS (ON)
APT1101RBFLL_SFLL
10,000
ID, DRAIN CURRENT (AMPERES)
Ciss
C, CAPACITANCE (pF)
10 5 100S
1,000 Coss 100 Crss
1mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE 1 10 100 1100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
I
D
10mS
.1
= 6.5A
12
VDS= 220V
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 100
10
TJ =+150C TJ =+25C 10
8
VDS= 550V
VDS= 880V
4
20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 60 td(off) 50
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 40
1
tf 30
V
DD G
td(on) and td(off) (ns)
40 30
= 733V
tr and tf (ns)
R
= 5
V
DD G
= 733V
T = 125C
J
R
= 5
L = 100H
20
T = 125C
J
L = 100H
20 10 10 0 6 12 14 16 18 20 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
td(on) 0 8 10
tr
12 14 16 18 20 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1400 1200
SWITCHING ENERGY (J)
V I
DD
6
8
10
1200 1000
SWITCHING ENERGY (J)
= 733V
= 733V
R
= 5
D J
= 13A
T = 125C
J
T = 125C L = 100H EON includes diode reverse recovery.
L = 100H
Eon
Eon
800
EON includes diode reverse recovery.
1000 800 600 400 200 0
600 400 200 0 12 14 16 18 20 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 6 8 10 Eoff
11-2003
Eoff
050-7187 Rev A
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
Gate Voltage
APT1101RBFLL_SFLL
10 %
90%
TJ = 125 C td(on) tr 90%
Drain Current
Gate Voltage
t
T = 125 C J
d(off) Drain Voltage
90%
5%
5%
Switching Energy
t f 10%
Drain Current
10 %
Drain Voltage
Switching Energy
0
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7187 Rev A
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
11-2003
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
3.81 (.150) 4.06 (.160) (Base of Lead)

▲Up To Search▲

Price & Availability of APT1101RSFLL

	To Download APT1101RSFLL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .